tzx... vishay semiconductors rev. a6, 08-aug-02 1 (8) www .vishay .com document number 85614 silicon epitaxial planar zdiodes features v ery sharp reverse characteristic low reverse current level v ery high stability low noise a vailable with tighter tolerances applications v oltage stabilization 94 9367 order instruction type ordering code remarks tzx2v4a tzx2v4atap ammopack absolute maximum ratings t j = 25 c parameter test conditions type symbol value unit power dissipation l=4 mm, t l =25 c p v 500 mw zcurrent i z p v /v z ma junction temperature t j 175 c storage temperature range t stg 65...+175 c maximum thermal resistance t j = 25 c parameter test conditions symbol value unit junction ambient l=4 mm, t l =constant r thja 300 k/w electrical characteristics t j = 25 c parameter test conditions type symbol min typ max unit forward voltage i f =200ma v f 1.5 v http://
tzx... vishay semiconductors rev. a6, 08-aug-02 2 (8) www .vishay .com document number 85614 t y pe v zmin. v zmax . t y pe v zmin. v zmax. r zmax. at i z i rmax. at v r i rmax 2) at v r 2) ty e (v) (v) ty e (v) (v) ( ) (ma) ( a) (v) ( a) (v) tzx2v4 23 26 tzx2v4a 2.3 2.5 100 5 5 0.5 50 1.0 tzx2v4 2.3 2.6 tzx2v4b 2.4 2.6 100 5 5 0.5 50 1.0 tzx2v7a 2.5 2.7 100 5 5 0.5 10 1.0 tzx2v7 2.5 2.9 tzx2v7b 2.6 2.8 100 5 5 0.5 10 1.0 tzx2v7 2.5 2.9 tzx2v7c 2.7 2.9 100 5 5 0.5 10 1.0 tzx3v0a 2.8 3.0 100 5 5 0.5 6 1.0 tzx3v0 2.8 3.2 tzx3v0b 2.9 3.1 100 5 5 0.5 6 1.0 tzx3v0 2.8 3.2 tzx3v0c 3.0 3.2 100 5 5 0.5 6 1.0 tzx3v3a 3.1 3.3 100 5 5 1 2 0.8 tzx3v3 3.1 3.5 tzx3v3b 3.2 3.4 100 5 5 1 2 0.8 tzx3v3 3.1 3.5 tzx3v3c 3.3 3.5 100 5 5 1 2 0.8 tzx3v6a 3.4 3.6 100 5 5 1 2 0.8 tzx3v6 3.4 3.8 tzx3v6b 3.5 3.7 100 5 5 1 2 0.8 tzx3v6 3.4 3.8 tzx3v6c 3.6 3.8 100 5 5 1 2 0.8 tzx3v9a 3.7 3.9 100 5 5 1 2 0.8 tzx3v9 3.7 4.1 tzx3v9b 3.8 4.0 100 5 5 1 2 0.8 tzx3v9 3.7 4.1 tzx3v9c 3.9 4.1 100 5 5 1 2 0.8 tzx4v3a 4.0 4.2 100 5 5 1.5 1.0 1.0 tzx4v3 40 45 tzx4v3b 4.1 4.3 100 5 5 1.5 1.0 1.0 tzx4v3 4.0 4.5 tzx4v3c 4.2 4.4 100 5 5 1.5 1.0 1.0 tzx4v3d 4.3 4.5 100 5 5 1.5 1.0 1.0 tzx4v7a 4.4 4.6 100 5 5 2 0.5 1.0 tzx4v7 44 49 tzx4v7b 4.5 4.7 100 5 5 2 0.5 1.0 tzx4v7 4.4 4.9 tzx4v7c 4.6 4.8 100 5 5 2 0.5 1.0 tzx4v7d 4.7 4.9 100 5 5 2 0.5 1.0 tzx5v1a 4.8 5.0 100 5 5 2 0.1 1.0 tzx5v1 48 53 tzx5v1b 4.9 5.1 100 5 5 2 0.1 1.0 tzx5v1 4.8 5.3 tzx5v1c 5.0 5.2 100 5 5 2 0.1 1.0 tzx5v1d 5.1 5.3 100 5 5 2 0.1 1.0 tzx5v6a 5.2 5.5 40 5 5 2 0.1 1.0 tzx5v6b 5.3 5.6 40 5 5 2 0.1 1.0 tzx5v6 5.2 5.9 tzx5v6c 5.4 5.7 40 5 5 2 0.1 1.0 tzx5v6 5.2 5.9 tzx5v6d 5.5 5.8 40 5 5 2 0.1 1.0 tzx5v6e 5.6 5.9 40 5 5 2 0.1 1.0
tzx... vishay semiconductors rev. a6, 08-aug-02 3 (8) www .vishay .com document number 85614 t y pe v zmin. v zmax . t y pe v zmin. v zmax. r zmax. at i z i rmax. at v r i rmax 2) . at v r 2) ty e (v) (v) ty e (v) (v) ( ) (ma) ( a) (v) ( a) (v) tzx6v2a 5.7 6.0 15 5 1 3 0.1 2.0 tzx6v2b 5.8 6.1 15 5 1 3 0.1 2.0 tzx6v2 5.7 6.6 tzx6v2c 6.0 6.3 15 5 1 3 0.1 2.0 tzx6v2 5.7 6.6 tzx6v2d 6.1 6.4 15 5 1 3 0.1 2.0 tzx6v2e 6.3 6.6 15 5 1 3 0.1 2.0 tzx6v8a 6.4 6.7 15 5 1 3.5 0.1 3.0 tzx6v8 64 72 tzx6v8b 6.6 6.9 15 5 1 3.5 0.1 3.0 tzx6v8 6.4 7.2 tzx6v8c 6.7 7.0 15 5 1 3.5 0.1 3.0 tzx6v8d 6.9 7.2 15 5 1 3.5 0.1 3.0 tzx7v5a 7.0 7.3 15 5 1 5.0 0.1 3.5 tzx7v5 70 79 tzx7v5b 7.2 7.6 15 5 1 5.0 0.1 3.5 tzx7v5 7.0 7.9 tzx7v5c 7.3 7.7 15 5 1 5.0 0.1 3.5 tzx7v5d 7.5 7.9 15 5 1 5.0 0.1 3.5 tzx8v2a 7.7 8.1 20 5 1 6.2 0.1 4.0 tzx8v2 77 87 tzx8v2b 7.9 8.3 20 5 1 6.2 0.1 4.0 tzx8v2 7.7 8.7 tzx8v2c 8.1 8.5 20 5 1 6.2 0.1 4.0 tzx8v2d 8.3 8.7 20 5 1 6.2 0.1 4.0 tzx9v1a 8.5 8.9 20 5 1 6.8 tzx9v1b 8.7 9.1 20 5 1 6.8 tzx9v1 8.5 9.7 tzx9v1c 8.9 9.3 20 5 1 6.8 tzx9v1 8.5 9.7 tzx9v1d 9.1 9.5 20 5 1 6.8 tzx9v1e 9.3 9.7 20 5 1 6.8 tzx10a 9.5 9.9 25 5 1 7.5 tzx10 95 10 6 tzx10b 9.7 10.1 25 5 1 7.5 tzx10 9.5 10.6 tzx10c 9.9 10.3 25 5 1 7.5 tzx10d 10.2 10.6 25 5 1 7.5 tzx11a 10.4 10.8 25 5 1 8.2 tzx11 10 4 11 6 tzx11b 10.7 11.1 25 5 1 8.2 tzx11 10.4 11.6 tzx11c 10.9 11.3 25 5 1 8.2 tzx11d 11.1 11.6 25 5 1 8.2 tzx12a 11.4 11.9 35 5 1 9.5 tzx12b 11.6 12.1 35 5 1 9.5 tzx12 11.4 12.7 tzx12c 11.9 12.4 35 5 1 9.5 tzx12 11.4 12.7 tzx12d 12.2 12.7 35 5 1 9.5 tzx12x 11.44 12.03 35 5 1 9.5 tzx13a 12.4 12.9 35 5 1 10 tzx13 12.4 13.4 tzx13b 12.6 13.1 35 5 1 10 tzx13 12.4 13.4 tzx13c 12.9 13.4 35 5 1 10
tzx... vishay semiconductors rev. a6, 08-aug-02 4 (8) www .vishay .com document number 85614 t y pe v zmin. v zmax . t y pe v zmin. v zmax. r zmax. at i z i rmax. at v r i rmax 2) . at v r 2) ty e (v) (v) ty e (v) (v) ( ) (ma) ( a) (v) ( a) (v) tzx14a 13.2 13.7 35 5 1 11 tzx14 13.2 14.3 tzx14b 13.5 14.0 35 5 1 11 tzx14 13.2 14.3 tzx14c 13.8 14.3 35 5 1 11 tzx15a 14.1 14.7 40 5 1 11.5 tzx15 14 1 15 5 tzx15b 14.5 15.1 40 5 1 11.5 tzx15 14.1 15.5 tzx15c 14.9 15.5 40 5 1 11.5 tzx15x 14.35 15.09 40 5 1 11.5 tzx16a 15.3 15.9 45 5 1 12 tzx16 15.3 17.1 tzx16b 15.7 16.5 45 5 1 12 tzx16 15.3 17.1 tzx16c 16.3 17.1 45 5 1 12 tzx18a 16.9 17.7 55 5 1 13 tzx18 16.9 19.0 tzx18b 17.5 18.3 55 5 1 13 tzx18 16.9 19.0 tzx18c 18.1 19.0 55 5 1 13 tzx20a 18.8 19.7 60 2 1 15 tzx20 18.8 21.2 tzx20b 19.5 20.4 60 2 1 15 tzx20 18.8 21.2 tzx20c 20.2 21.2 60 2 1 15 tzx22a 20.9 21.9 65 2 1 17 tzx22 20.9 23.3 tzx22b 21.6 22.6 65 2 1 17 tzx22 20.9 23.3 tzx22c 22.3 23.3 65 2 1 17 tzx24a 22.9 24.0 70 2 1 19 tzx24 22 9 25 5 tzx24b 23.6 24.7 70 2 1 19 tzx24 22.9 25.5 tzx24c 24.3 25.5 70 2 1 19 tzx24x 22.61 23.77 70 2 1 19 tzx27a 25.2 26.6 80 2 1 21 tzx27 25 2 28 6 tzx27b 26.2 27.6 80 2 1 21 tzx27 25.2 28.6 tzx27c 27.2 28.6 80 2 1 21 TZX27X 26.99 28.39 80 2 1 21 tzx30a 28.2 29.6 100 2 1 23 tzx30 28 2 31 6 tzx30b 29.2 30.6 100 2 1 23 tzx30 28.2 31.6 tzx30c 30.2 31.6 100 2 1 23 tzx30x 29.02 30.51 100 2 1 23 tzx33a 31.2 32.6 120 2 1 25 tzx33 31.2 34.5 tzx33b 32.2 33.6 120 2 1 25 tzx33 31.2 34.5 tzx33c 33.2 34.5 120 2 1 25 tzx36a 34.2 35.7 140 2 1 27 tzx36 34 2 38 0 tzx36b 35.3 36.8 140 2 1 27 tzx36 34.2 38.0 tzx36c 36.4 38.0 140 2 1 27 tzx36x 35.36 37.19 140 2 1 27 2) additional measurement please note: additional measurement of voltage group 9v1 to 36 i r at 95 % v zmin = < 35 na at t j 25 c
tzx... vishay semiconductors rev. a6, 08-aug-02 5 (8) www .vishay .com document number 85614 characteristics (t j = 25 c unless otherwise specified) 95 961 1 0 5 10 15 0 100 200 300 400 500 20 r therm. resist. junction / ambient ( k/w ) thja l lead length ( mm ) ll t l =constant figure 1 . thermal resistance vs. lead length 0 40 80 120 160 0 100 300 400 500 600 p t otal power dissipation ( mw ) tot t amb ambient t emperature ( c ) 200 95 9602 200 figure 2 . t otal power dissipation vs. ambient t emperature 0 5 10 15 20 1 10 100 1000 v v oltage change ( mv ) z v z z-v oltage ( v ) 25 95 9598 a i z =5ma t j =2 5 c figure 3 . t ypical change of w orking v oltage under operating conditions at t am b =25 c 60 0 60 120 180 0.8 0.9 1.0 1.1 1.2 1.3 v relative v oltage change ztn t j junction t emperature ( c ) 240 95 9599 v ztn =v zt /v z (25 c) tk vz =10 10 4 /k 8 10 4 /k 4 10 4 /k 6 10 4 /k 4 10 4 /k 2 10 4 /k 2 10 4 /k 0 figure 4 . t ypical change of w orking v oltage vs. junction t emperature 01 0 2 0 30 5 0 5 10 15 t k t emperature coef ficient of v ( 10 /k ) vz v z z-voltage ( v ) 50 95 9600 40 z 4 i z =5ma figure 5 . t emperature coef ficient of vz vs. zv oltage 0 5 10 15 0 50 100 150 200 c diode capacitance ( pf ) d v z z-v oltage ( v ) 25 95 9601 20 t j =2 5 c v r =2v figure 6 . diode capacitance vs. zvoltage
tzx... vishay semiconductors rev. a6, 08-aug-02 6 (8) www .vishay .com document number 85614 0 0.2 0.4 0.6 0.8 0.001 0.01 0.1 1 10 100 1.0 95 9605 i forward current ( ma ) f v f forward v oltage ( v ) t j =2 5 c figure 7 . forward current vs. forward v oltage 04 8 1216 20 95 9604 0 20 40 60 80 100 i z-current ( ma ) z v z z-v oltage ( v ) p tot =500mw t amb =25 c figure 8 . zcurrent vs. zv oltage 15 20 25 30 0 10 20 30 40 50 i z-current ( ma ) z v z z-v oltage ( v ) 35 95 9607 p tot =500mw t amb =25 c figure 9 . zcurrent vs. zv oltage 0 5 10 15 20 1 10 100 1000 r dif ferential z-resistance ( ) z v z z-v oltage ( v ) 25 95 9606 t j =25 c i z =1ma 5ma 10ma figure 10. differential zresistance vs. zvoltage 1 10 100 1000 z thermal resistance for pulse cond. (k/w) thp t p pulse length ( ms ) 95 9603 10 1 10 0 10 1 10 2 t p /t=0.5 t p /t=0.2 t p /t=0.1 t p /t=0.05 t p /t=0.02 t p /t=0.01 single pulse r thja =300k/w t=t jmax t amb i zm =(v z +(v z 2 +4r zj t/z thp ) 1/2 )/(2r zj ) figure 11. thermal response
tzx... vishay semiconductors rev. a6, 08-aug-02 7 (8) www .vishay .com document number 85614 dimensions in mm cathode identification ? 1.7 max. ? 0.55 max. 3.9 max. 26 min. technical drawings according to din specifications 94 9366 standard glass case 54 a 2 din 41880 jedec do 35 weight max. 0.3g 26 min.
tzx... vishay semiconductors rev. a6, 08-aug-02 8 (8) www .vishay .com document number 85614 ozone depleting substances policy statement i t is the policy of v ishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2 . regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss ). the montreal protocol (1987 ) and its london amendments (1990 ) intend to severely restrict the use of odss a n d forbid t h e i r use within the next ten years. v arious national and international initiatives are pressing for an earlier ban on these substances. v ishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a , b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (e p a ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively . v ishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. w e reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in dif ferent applications. all operating parameters must be validated for each customer application by the custome r . should the buyer use v ishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify v ishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use. v ishay semiconductor gmbh, p .o.b. 3535, d-74025 heilbronn, germany t elephone: 49 (0) 7131 67 2831, fax number: 49 (0) 7131 67 2423
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